We tested the theoretical prediction that the band structures on the opposite sides of a homojunction can be artificially displaced in energy with respect to each other by means of double intralayers of atomiclike thickness, producing band discontinuities of potential interest for practical applications. Evidence of such discontinuities was found when Ga-As, Al-As, Ga-P, or Al-P intralayers were inserted between Si and Si or Ge and Ge.
Titre
Microscopic Manipulation of Homojunction Band Lineups
Publié dans
Journal of Applied Physics
Volume
71
Numéro
4
Pages
2048-2050
Date
1992
ISSN
0021-8979
Note
Ecole polytech fed lausanne,ph ecublens,inst phys appl,ch-1015 lausanne,switzerland. kfa julich gmbh,forschungszentrum,inst thin film & ion technol,w-5170 julich 1,germany. scuola int super studi avanzati,i-34014 trieste,italy. Marsi, m, univ wisconsin,dept phys,madison,wi 53706.
ISI Document Delivery No.: HE698
Date de création de la notice
2006-10-03