Infoscience

Journal article

Kelvin Probe and Synchrotron Radiation Study of Surface Photovoltage and Band Bending at Metal Gaas (100) Interfaces

Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate the surface photovoltage (SPV) induced by synchrotron radiation at GaAs surfaces. A large and quasi-permanent SPV is found at surfaces of low-doped and low-temperature samples. SPV discharge mechanisms are investigated. The CPD technique is used to define conditions under which SPV is negligible, leading to reliable measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and GaAs (100) surfaces.

    Keywords: SCHOTTKY-BARRIER FORMATION ; PHOTOEMISSION ; TEMPERATURE ; GAAS(110) ; CONTACTS

    Note:

    Ctr rech mecan croissance cristalline,cnrs,marseille,france. univ aix marseille 1,f-13331 marseille 3,france. univ wisconsin,dept phys,madison,wi 53706. univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed ecublens,inst phys appl,ch-1015 lausanne,switzerland. Mao, d, princeton univ,dept elect engn,princeton,nj 08544.

    ISI Document Delivery No.: HM075

    Part A

    Reference

    Record created on 2006-10-03, modified on 2016-08-08

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