Kelvin Probe and Synchrotron Radiation Study of Surface Photovoltage and Band Bending at Metal GaAs (100) Interfaces
Mao, D.; Kahn, A.; Lelay, G.; Marsi, M.; Hwu, Y.; Margaritondo, G.
1992

Abstract

Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate the surface photovoltage (SPV) induced by synchrotron radiation at GaAs surfaces. A large and quasi-permanent SPV is found at surfaces of low-doped and low-temperature samples. SPV discharge mechanisms are investigated. The CPD technique is used to define conditions under which SPV is negligible, leading to reliable measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and GaAs (100) surfaces.

Details

Title Kelvin Probe and Synchrotron Radiation Study of Surface Photovoltage and Band Bending at Metal GaAs (100) Interfaces
Author(s) Mao, D. ; Kahn, A. ; Lelay, G. ; Marsi, M. ; Hwu, Y. ; Margaritondo, G.
Published in Applied Surface Science
Volume 56-8
Pages 142-150
Date 1992
ISSN 0169-4332
Keywords
Note Ctr rech mecan croissance cristalline,cnrs,marseille,france. univ aix marseille 1,f-13331 marseille 3,france. univ wisconsin,dept phys,madison,wi 53706. univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed ecublens,inst phys appl,ch-1015 lausanne,switzerland. Mao, d, princeton univ,dept elect engn,princeton,nj 08544.
ISI Document Delivery No.: HM075
Part A
DOI https://doi.org/10.1016/0169-4332(92)90227-O
Other identifier(s) View record in Web of Science
Laboratories LSE
LPRX
Record Appears in Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2006-10-03

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