Microscopic Schottky-Barrier Control - Semiconductor-on-Metal Case
1992
Abstract
We have modified the Schottky-barrer height of Si overlayers on Ag(111) substrates by means of Cs intralayers of different thicknesses. We also found a correlation between these changes and those of the work function, which makes it possible to measure the true value of the S parameter.
Details
Title
Microscopic Schottky-Barrier Control - Semiconductor-on-Metal Case
Author(s)
Hwu, Y. ; Marsi, M. ; Almeras, P. ; Margaritondo, G.
Published in
Physical Review B
Volume
46
Issue
3
Pages
1835-1837
Date
1992
ISSN
0163-1829
Note
Ecole polytech fed lausanne,ph ecublens,inst phys appl,ch-1015 lausanne,switzerland. Hwu, y, univ wisconsin,dept phys,madison,wi 53706.
ISI Document Delivery No.: JE626
ISI Document Delivery No.: JE626
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Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03