Microscopic Schottky-Barrier Control - Semiconductor-on-Metal Case
We have modified the Schottky-barrer height of Si overlayers on Ag(111) substrates by means of Cs intralayers of different thicknesses. We also found a correlation between these changes and those of the work function, which makes it possible to measure the true value of the S parameter.
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Ecole polytech fed lausanne,ph ecublens,inst phys appl,ch-1015 lausanne,switzerland. Hwu, y, univ wisconsin,dept phys,madison,wi 53706.
ISI Document Delivery No.: JE626
Record created on 2006-10-03, modified on 2016-08-08