Intrinsic and Extrinsic Charge Neutrality Levels in Semiconductors - an Empirical-Approach
1992
Abstract
We discuss an empirical method to estimate the positions of intrinsic charge neutrality levels of semiconductors. The method, based on the relation between intrinsic and extrinsic charge neutrality levels, has been applied to Si, Ge, GaAs, GaP and InP.
Details
Title
Intrinsic and Extrinsic Charge Neutrality Levels in Semiconductors - an Empirical-Approach
Author(s)
Gozzo, F. ; Coluzza, C. ; Margaritondo, G. ; Flores, F.
Published in
Solid State Communications
Volume
81
Issue
7
Pages
553-556
Date
1992
ISSN
0038-1098
Keywords
Note
Univ autonoma madrid,fac ciencias,dept fis mat condensada c-xii,e-28049 madrid,spain. Gozzo, f, ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: HG783
ISI Document Delivery No.: HG783
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Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03