Intrinsic and Extrinsic Charge Neutrality Levels in Semiconductors - an Empirical-Approach
Gozzo, F.; Coluzza, C.; Margaritondo, G.; Flores, F.
1992

Abstract

We discuss an empirical method to estimate the positions of intrinsic charge neutrality levels of semiconductors. The method, based on the relation between intrinsic and extrinsic charge neutrality levels, has been applied to Si, Ge, GaAs, GaP and InP.

Details

Title Intrinsic and Extrinsic Charge Neutrality Levels in Semiconductors - an Empirical-Approach
Author(s) Gozzo, F. ; Coluzza, C. ; Margaritondo, G. ; Flores, F.
Published in Solid State Communications
Volume 81
Issue 7
Pages 553-556
Date 1992
ISSN 0038-1098
Keywords
Note Univ autonoma madrid,fac ciencias,dept fis mat condensada c-xii,e-28049 madrid,spain. Gozzo, f, ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: HG783
DOI https://doi.org/10.1016/0038-1098(92)90410-B
Other identifier(s) View record in Web of Science
Laboratories LSE
LPRX
Record Appears in Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2006-10-03

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