Synchrotron-Radiation-Stimulated Tungsten Deposition on Silicon from W(CO)6
1991
Abstract
We report a synchrotron-radiation-excited photoemission study of the adsorption of W(CO)6 on Si(111)2 x 1. W(CO)6 is shown to adsorb molecularly on Si at 100 K, and to undergo dissociation at room temperature (RT). Exposure of a reacted surface at 100 K to unmonochromatized synchrotron light results in the formation of a metal layer on Si. Such a metal layer is stable during RT annealing.
Details
Title
Synchrotron-Radiation-Stimulated Tungsten Deposition on Silicon from W(CO)6
Author(s)
Zanoni, R. ; Piancastelli, M. N. ; Marsi, M. ; Margaritondo, G.
Published in
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films
Volume
9
Issue
3
Pages
931-934
Date
1991
ISSN
0734-2101
Keywords
Note
Univ roma tor vergata,dipartimento sci tecnol chim,i-00173 rome,italy. univ wisconsin,dept phys,madison,wi 53706. univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Zanoni, r, univ rome la sapienza,dipartmento chim,p le aldo moro 5,i-00185 rome,italy.
ISI Document Delivery No.: FR761
Part 1
ISI Document Delivery No.: FR761
Part 1
Other identifier(s)
View record in Web of Science
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03