Synchrotron-Radiation-Stimulated Tungsten Deposition on Silicon from W(Co)6
We report a synchrotron-radiation-excited photoemission study of the adsorption of W(CO)6 on Si(111)2 x 1. W(CO)6 is shown to adsorb molecularly on Si at 100 K, and to undergo dissociation at room temperature (RT). Exposure of a reacted surface at 100 K to unmonochromatized synchrotron light results in the formation of a metal layer on Si. Such a metal layer is stable during RT annealing.
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Univ roma tor vergata,dipartimento sci tecnol chim,i-00173 rome,italy. univ wisconsin,dept phys,madison,wi 53706. univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Zanoni, r, univ rome la sapienza,dipartmento chim,p le aldo moro 5,i-00185 rome,italy.
ISI Document Delivery No.: FR761
Record created on 2006-10-03, modified on 2016-08-08