Semiconductor-on-Metal Schottky Barriers - Ge on Ni and Ag

We explore the formation of Schottky barriers by adsorption of Ge overlayers onto single crystal Ni and Ag substrates. The results are compared to earlier results from Si-on-metal systems as well as interfaces formed by the metal-on-semiconductor deposition sequence. We find that Ge overlayers on Ag form extended interfaces with the creation of an intermediate metallic phase - whereas Ag on Ge forms abrupt interfaces. However, the Ge on Ni interface is found to be abrupt. For the resultant p-type Schottky barrier heights we report values of 0.18 eV for Ge/Ag(111) and Ge/Ag(100) - in agreement with the Ag-on-Ge value - and of 0.17 eV for Ge/Ni(111). The pinning strength parameter derived from our data is S = 0.11 eV, in agreement with the value for metal-on-Ge interfaces.


Published in:
Solid State Communications, 80, 1, 15-20
Year:
1991
ISSN:
0038-1098
Keywords:
Note:
Univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Rioux, d, univ wisconsin,dept phys,madison,wi 53706.
ISI Document Delivery No.: GK853
Laboratories:




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