Bicasrcuo-Semiconductor Interface Formation Processes
Hwu, Y.; Lozzi, L.; Larosa, S.; Marsi, M.; Onellion, M.; Berger, H.; Gozzo, F.; Levy, F.; Margaritondo, G.
1991

Abstract

The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi.

Details

Title Bicasrcuo-Semiconductor Interface Formation Processes
Author(s) Hwu, Y. ; Lozzi, L. ; Larosa, S. ; Marsi, M. ; Onellion, M. ; Berger, H. ; Gozzo, F. ; Levy, F. ; Margaritondo, G.
Published in Solid State Communications
Volume 78
Issue 10
Pages 869-872
Date 1991
ISSN 0038-1098
Note Univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed ph ecublens,inst phys appl,ch-1015 lausanne,switzerland. Hwu, y, univ wisconsin,dept phys,madison,wi 53706.
ISI Document Delivery No.: FT610
DOI https://doi.org/10.1016/0038-1098(91)90245-Q
Other identifier(s) View record in Web of Science
Laboratories LSE
LPRX
Record Appears in Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2006-10-03

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