The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi.
Title
Bicasrcuo-Semiconductor Interface Formation Processes
Published in
Solid State Communications
Volume
78
Issue
10
Pages
869-872
Date
1991
ISSN
0038-1098
Note
Univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed ph ecublens,inst phys appl,ch-1015 lausanne,switzerland. Hwu, y, univ wisconsin,dept phys,madison,wi 53706.
ISI Document Delivery No.: FT610
Record creation date
2006-10-03