Bicasrcuo-Semiconductor Interface Formation Processes

The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi.


Published in:
Solid State Communications, 78, 10, 869-872
Year:
1991
ISSN:
0038-1098
Note:
Univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed ph ecublens,inst phys appl,ch-1015 lausanne,switzerland. Hwu, y, univ wisconsin,dept phys,madison,wi 53706.
ISI Document Delivery No.: FT610
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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