Infoscience

Journal article

Bicasrcuo-Semiconductor Interface Formation Processes

The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi.

    Note:

    Univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed ph ecublens,inst phys appl,ch-1015 lausanne,switzerland. Hwu, y, univ wisconsin,dept phys,madison,wi 53706.

    ISI Document Delivery No.: FT610

    Reference

    Record created on 2006-10-03, modified on 2016-08-08

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