Low-Coverage Metal-Induced Unrelaxation of the Semiconductor Surface at Ag Inp(110) Interfaces - a Photoemission Extended X-Ray Absorption Fine-Structure Study


Published in:
Journal of Vacuum Science & Technology B, 8, 4, 995-1000
Year:
1990
ISSN:
1071-1023
Note:
Univ wisconsin,dept phys,stoughton,wi 53589. univ wisconsin,ctr synchrotron radiat,stoughton,wi 53589. Mangat, ps, univ notre dame,notre dame,in 46556.
ISI Document Delivery No.: DU830
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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