Unrelaxation of the Semiconductor Surface at Low-Coverage Ag Inp(110) Interfaces as Determined by Photoemission Extended X-Ray-Absorption Fine-Structure
1990
Details
Title
Unrelaxation of the Semiconductor Surface at Low-Coverage Ag Inp(110) Interfaces as Determined by Photoemission Extended X-Ray-Absorption Fine-Structure
Author(s)
Choudhary, K. M. ; Mangat, P. S. ; Kilday, D. ; Margaritondo, G.
Published in
Physical Review B
Volume
41
Issue
11
Pages
7576-7580
Date
1990
ISSN
0163-1829
Note
Univ wisconsin,ctr synchrotron radiat,stoughton,wi 53589. univ wisconsin,dept phys,stoughton,wi 53589. Choudhary, km, univ notre dame,dept mat sci & engn,notre dame,in 46556.
ISI Document Delivery No.: CZ843
ISI Document Delivery No.: CZ843
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03