Unrelaxation of the Semiconductor Surface at Low-Coverage Ag Inp(110) Interfaces as Determined by Photoemission Extended X-Ray-Absorption Fine-Structure


Published in:
Physical Review B, 41, 11, 7576-7580
Year:
1990
ISSN:
0163-1829
Note:
Univ wisconsin,ctr synchrotron radiat,stoughton,wi 53589. univ wisconsin,dept phys,stoughton,wi 53589. Choudhary, km, univ notre dame,dept mat sci & engn,notre dame,in 46556.
ISI Document Delivery No.: CZ843
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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