Low-Temperature Formation of Metal Molecular-Beam Epitaxy-Gaas(100) Interfaces - Approaching Ideal Chemical and Electronic Limits
1989
Details
Title
Low-Temperature Formation of Metal Molecular-Beam Epitaxy-Gaas(100) Interfaces - Approaching Ideal Chemical and Electronic Limits
Author(s)
Viturro, R. E. ; Chang, S. ; Shaw, J. L. ; Mailhiot, C. ; Brillson, L. J. ; Terrasi, A. ; Hwu, Y. ; Margaritondo, G. ; Kirchner, P. D. ; Woodall, J. M.
Published in
Journal of Vacuum Science & Technology B
Volume
7
Issue
4
Pages
1007-1012
Date
1989
ISSN
1071-1023
Note
Univ wisconsin,dept phys,madison,wi 53706. ibm corp,thomas j watson res ctr,yorktown hts,ny 10598. Viturro, re, xerox corp,webster res ctr,114-41d,webster,ny 14580.
ISI Document Delivery No.: AK872
ISI Document Delivery No.: AK872
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Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03