Low-Temperature Formation of Metal Molecular-Beam Epitaxy-Gaas(100) Interfaces - Approaching Ideal Chemical and Electronic Limits


Published in:
Journal of Vacuum Science & Technology B, 7, 4, 1007-1012
Year:
1989
ISSN:
1071-1023
Note:
Univ wisconsin,dept phys,madison,wi 53706. ibm corp,thomas j watson res ctr,yorktown hts,ny 10598. Viturro, re, xerox corp,webster res ctr,114-41d,webster,ny 14580.
ISI Document Delivery No.: AK872
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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