Infoscience

Journal article

Low-Temperature Formation of Metal Molecular-Beam Epitaxy-Gaas(100) Interfaces - Approaching Ideal Chemical and Electronic Limits

    Note:

    Univ wisconsin,dept phys,madison,wi 53706. ibm corp,thomas j watson res ctr,yorktown hts,ny 10598. Viturro, re, xerox corp,webster res ctr,114-41d,webster,ny 14580.

    ISI Document Delivery No.: AK872

    Reference

    Record created on 2006-10-03, modified on 2016-08-08

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