Formation of Schottky Barriers on Gaas(110) - from Adsorbate-Induced Gap States to Interface Metallicity
1989
Details
Title
Formation of Schottky Barriers on Gaas(110) - from Adsorbate-Induced Gap States to Interface Metallicity
Author(s)
Kahn, A. ; Stiles, K. ; Mao, D. ; Horng, S. F. ; Young, K. ; McKinley, J. ; Kilday, D. G. ; Margaritondo, G.
Published in
Journal of Electronic Materials
Volume
18
Issue
1
Pages
33-37
Date
1989
ISSN
0361-5235
Note
Univ wisconsin,dept phys,madison,wi 53706. univ wisconsin,ctr synchrotron radiat,madison,wi 53706. Kahn, a, princeton univ,dept elect engn,princeton,nj 08544.
ISI Document Delivery No.: R9630
ISI Document Delivery No.: R9630
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03