Formation of Schottky Barriers on Gaas(110) - from Adsorbate-Induced Gap States to Interface Metallicity


Published in:
Journal of Electronic Materials, 18, 1, 33-37
Year:
1989
ISSN:
0361-5235
Note:
Univ wisconsin,dept phys,madison,wi 53706. univ wisconsin,ctr synchrotron radiat,madison,wi 53706. Kahn, a, princeton univ,dept elect engn,princeton,nj 08544.
ISI Document Delivery No.: R9630
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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