Infoscience

Journal article

Growth of Ge Overlayers onto (Hgcd)Te - a Comparison between Cleaved and Ion-Sputtered Surfaces

    Note:

    Univ wisconsin,dept phys,madison,wi 53706. Davis, gd, martin marietta corp labs,baltimore,md 21227.

    ISI Document Delivery No.: J2593

    Part 2

    Reference

    • LSE-ARTICLE-1987-006

    Record created on 2006-10-03, modified on 2016-08-08

Fulltext

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