Effect of Surface Preparation on Ge Overlayer Growth on (Hgcd)Te
1986
Details
Title
Effect of Surface Preparation on Ge Overlayer Growth on (Hgcd)Te
Author(s)
Davis, G. D. ; Beck, W. A. ; Kelly, M. K. ; Mo, Y. W. ; Margaritondo, G.
Published in
Applied Physics Letters
Volume
49
Issue
23
Pages
1611-1613
Date
1986
ISSN
0003-6951
Note
Univ wisconsin,dept phys,madison,wi 53706. Davis, gd, martin marietta corp labs,1450 s rolling rd,baltimore,md 21227.
ISI Document Delivery No.: F0875
ISI Document Delivery No.: F0875
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03