Effect of Surface Preparation on Ge Overlayer Growth on (Hgcd)Te


Published in:
Applied Physics Letters, 49, 23, 1611-1613
Year:
1986
ISSN:
0003-6951
Note:
Univ wisconsin,dept phys,madison,wi 53706. Davis, gd, martin marietta corp labs,1450 s rolling rd,baltimore,md 21227.
ISI Document Delivery No.: F0875
Laboratories:




 Record created 2006-10-03, last modified 2018-12-03


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