Infoscience

Journal article

Effect of Surface Preparation on Ge Overlayer Growth on (Hgcd)Te

    Note:

    Univ wisconsin,dept phys,madison,wi 53706. Davis, gd, martin marietta corp labs,1450 s rolling rd,baltimore,md 21227.

    ISI Document Delivery No.: F0875

    Reference

    Record created on 2006-10-03, modified on 2016-08-08

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