GaSe-Ge and GaSe-Si - 2 Possible Examples of Schottky-Like Behavior of Heterojunction Interfaces
1985
Details
Title
GaSe-Ge and GaSe-Si - 2 Possible Examples of Schottky-Like Behavior of Heterojunction Interfaces
Author(s)
Daniels, R. R. ; Margaritondo, G. ; Quaresima, C. ; Perfetti, P. ; Levy, F.
Published in
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films
Volume
3
Issue
3
Pages
979-980
Date
1985
ISSN
0734-2101
Note
Inst struttura mat,frascati,italy. univ wisconsin,dept phys,madison,wi 53706. ecole polytech fed lausanne,phys appl lab,ch-1007 lausanne,switzerland.
ISI Document Delivery No.: AKX49
ISI Document Delivery No.: AKX49
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Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03