Gase-Ge and Gase-Si - 2 Possible Examples of Schottky-Like Behavior of Heterojunction Interfaces


Published in:
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, 3, 3, 979-980
Year:
1985
ISSN:
0734-2101
Note:
Inst struttura mat,frascati,italy. univ wisconsin,dept phys,madison,wi 53706. ecole polytech fed lausanne,phys appl lab,ch-1007 lausanne,switzerland.
ISI Document Delivery No.: AKX49
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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