Infoscience

Journal article

Gase-Ge and Gase-Si - 2 Possible Examples of Schottky-Like Behavior of Heterojunction Interfaces

    Note:

    Inst struttura mat,frascati,italy. univ wisconsin,dept phys,madison,wi 53706. ecole polytech fed lausanne,phys appl lab,ch-1007 lausanne,switzerland.

    ISI Document Delivery No.: AKX49

    Reference

    Record created on 2006-10-03, modified on 2016-08-08

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