Schottky-Barrier Formation on Amorphous-Semiconductors - Au on Ge(111), a-Ge, and Hydrogenated a-Ge
1984
Details
Title
Schottky-Barrier Formation on Amorphous-Semiconductors - Au on Ge(111), a-Ge, and Hydrogenated a-Ge
Author(s)
Quaresima, C. ; Perfetti, P. ; Daniels, R. R. ; Margaritondo, G.
Published in
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films
Volume
2
Issue
2
Pages
524-526
Date
1984
ISSN
0734-2101
Note
Univ wisconsin,dept phys,madison,wi 53706. Quaresima, c, ist nazl fis nucl,nazl struttura mat grp,puls,nazl lab,frascati,italy.
ISI Document Delivery No.: SS703
ISI Document Delivery No.: SS703
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Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03