Schottky-Barrier Formation on Amorphous-Semiconductors - Au on Ge(111), a-Ge, and Hydrogenated a-Ge


Published in:
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, 2, 2, 524-526
Year:
1984
ISSN:
0734-2101
Note:
Univ wisconsin,dept phys,madison,wi 53706. Quaresima, c, ist nazl fis nucl,nazl struttura mat grp,puls,nazl lab,frascati,italy.
ISI Document Delivery No.: SS703
Laboratories:




 Record created 2006-10-03, last modified 2018-01-27


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