Photoemission-Studies of Reactive Diffusion and Localized Doping at Ii-Vi-Compound Semiconductor-Metal Interfaces
1983
Abstract
Soft x-ray photoemission spectroscopy measurements reveal strong differences in chemical bonding and diffusion between II–VI and III–V compound semiconductor-metal interfaces which provide a chemical basis for their systematic differences in Schottky barrier formation.
Details
Title
Photoemission-Studies of Reactive Diffusion and Localized Doping at Ii-Vi-Compound Semiconductor-Metal Interfaces
Author(s)
Brillson, L. J. ; Brucker, C. F. ; Stoffel, N. G. ; Katnani, A. ; Daniels, R. ; Margaritondo, G.
Published in
Physica B+C
Volume
117-118
Issue
2
Pages
848-850
Date
1983
ISSN
0378-4371
Note
Univ wisconsin,dept phys,madison,wi 53706. Brillson, lj, xerox corp,webster res ctr,rochester,ny 14644. ISI Document Delivery No.: QJ036
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03