Soft x-ray photoemission spectroscopy measurements reveal strong differences in chemical bonding and diffusion between II–VI and III–V compound semiconductor-metal interfaces which provide a chemical basis for their systematic differences in Schottky barrier formation.
Title
Photoemission-Studies of Reactive Diffusion and Localized Doping at Ii-Vi-Compound Semiconductor-Metal Interfaces
Published in
Physica B+C
Volume
117-118
Issue
2
Pages
848-850
Date
1983
ISSN
0378-4371
Note
Univ wisconsin,dept phys,madison,wi 53706. Brillson, lj, xerox corp,webster res ctr,rochester,ny 14644. ISI Document Delivery No.: QJ036
Record creation date
2006-10-03