Infoscience

Journal article

Photoemission-Studies of Reactive Diffusion and Localized Doping at Ii-Vi-Compound Semiconductor-Metal Interfaces

Soft x-ray photoemission spectroscopy measurements reveal strong differences in chemical bonding and diffusion between II–VI and III–V compound semiconductor-metal interfaces which provide a chemical basis for their systematic differences in Schottky barrier formation.

    Note:

    Univ wisconsin,dept phys,madison,wi 53706. Brillson, lj, xerox corp,webster res ctr,rochester,ny 14644. ISI Document Delivery No.: QJ036

    Reference

    Record created on 2006-10-03, modified on 2016-08-08

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