Photoemission-Studies of Reactive Diffusion and Localized Doping at Ii-Vi-Compound Semiconductor-Metal Interfaces

Soft x-ray photoemission spectroscopy measurements reveal strong differences in chemical bonding and diffusion between II–VI and III–V compound semiconductor-metal interfaces which provide a chemical basis for their systematic differences in Schottky barrier formation.


Published in:
Physica B+C, 117-118, 2, 848-850
Year:
1983
ISSN:
0378-4371
Note:
Univ wisconsin,dept phys,madison,wi 53706. Brillson, lj, xerox corp,webster res ctr,rochester,ny 14644. ISI Document Delivery No.: QJ036
Laboratories:




 Record created 2006-10-03, last modified 2018-01-27


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