Photoemission-Studies of Heterojunction Interface Formation - Ge-Gaas(110) and Ge-Si(111)


Published in:
Journal of Vacuum Science & Technology, 18, 3, 784-786
Year:
1981
ISSN:
0022-5355
Note:
Margaritondo, g, univ wisconsin,dept phys,madison,wi 53705.
ISI Document Delivery No.: LV472
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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