Infoscience

Journal article

Photoemission-Studies of Heterojunction Interface Formation - Ge-Gaas(110) and Ge-Si(111)

    Note:

    Margaritondo, g, univ wisconsin,dept phys,madison,wi 53705.

    ISI Document Delivery No.: LV472

    Reference

    • LSE-ARTICLE-1981-011

    Record created on 2006-10-03, modified on 2016-08-08

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