AFM and SNOM characterization of carboxylic acid terminated silicon and silicon nitride surfaces
Silicon and silicon nitride surfaces have been successfully terminated with carboxylic acid monolayers and investigated by atomic force microscopy (AFM) and scanning near-field optical microscopy (SNOM). On clean Si surface, AFM showed topographical variations of 0.3-0.4 nm while for the clean Si3N4 surface the corrugation was around 3-4 nm. After material deposition, the corrugation increased in both samples with a value in topography of 1-2 nm for Si and 5-6 nm for Si3N4. The space distribution of specific chemical species was obtained by taking SNOM reflectivity at several infrared wavelengths corresponding to stretch absorption bands of the material. The SNOM images showed a constant contribution in the local reflectance, suggesting that the two surfaces were uniformly covered. (C) 2003 Elsevier B.V. All rights reserved.
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CNR, Ist Struttura Mat, I-00133 Rome, Italy. Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. USN, Res Lab, Div Opt Sci, Washington, DC 20375 USA. Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA. Vanderbilt Univ, Dept Mol Physiol & Biophys, Nashville, TN 37232 USA. CNR, Ist Struttura Mat, Area Ric Roma, Monterotondo Stn, I-00016 Monterotondo, Italy. CNR, Ist Studio Mat Nanostrutturati, Area Ric Roma, Monterotondo Stn, I-00016 Monterotondo, Italy. Cricenti, A, CNR, Ist Struttura Mat, Via Fosso Cavaliere 100, I-00133 Rome, Italy.
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Record created on 2006-10-03, modified on 2016-08-08