Optical nanospectroscopy study of ion-implanted silicon and biological growth medium
The advent of scanning near-field optical microscopy (SNOM) has augmented at the microscopic level the usefulness of IR spectroscopy. Two-dimensional imaging of chemical constituents makes this a very attractive and powerful new approach. In this paper we present SNOM results on boron-doped silicon and on biological growth medium by means of shear-force, reflectivity and photocurrent measurements. Such experiments allowed us to identify boron clusters embedded in silicon and the distribution of growth medium constituents with a lateral resolution well below the diffraction limit. (C) 2003 Elsevier B.V. All rights reserved.
Ist Stuttura Mat, I-00133 Rome, Italy. Vanderbilt Univ, Dept Mol Physiol & Biophys, Nashville, TN 37232 USA. Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA. USN, Res Lab, Div Opt Sci, Washington, DC 20375 USA. Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Cricenti, A, Ist Stuttura Mat, Via Fosso del Cavaliere 100, I-00133 Rome, Italy.
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Record created on 2006-10-03, modified on 2016-08-08