Optical nanospectroscopy applications in material science
The advent of scanning near-field optical microscopy (SNOM) has augmented at a microscopic level the usefulness of optical spectroscopy in the region between 300 nm and 10 mum. Two-dimensional imaging of chemical constituents makes this a very attractive and powerful new approach. In this paper we show SNOM results obtained in several geometrical configurations on boron clusters in silicon, Li clusters embedded in a LiF sample and BN growth on silicon. We also show some results on the wavelength dependence of the reflectivity (R) in the near infrared (IR) of biological cells in liquid environment with the observation of the local fluorescence. The SNOM images revealed features that were not present in the corresponding shear-force (SF) images and which were due to localized changes in the bulk properties of the sample. The size of the smallest detected features clearly demonstrated that near-field conditions were reached both in the visible and infrared region. (C) 2004 Elsevier B.V. All rights reserved.
Keywords: SNOM ; infrared ; photocurrent ; FREE-ELECTRON-LASER ; SCANNING-TUNNELING-MICROSCOPY ; NEAR-FIELD OPTICS ; BIOLOGICAL SAMPLES ; PLASMA SOURCE ; LIF CRYSTALS ; FORCE ; PHOTOEMISSION ; SEMICONDUCTOR ; REFLECTION
Ist Stutturia Mat, I-00133 Rome, Italy. Ecole Polytech Fed Lausanne, Fac Sci Base, CH-1015 Lausanne, Switzerland. USN, Res Lab, Div Opt Sci, Washington, DC 20375 USA. Vanderbilt Univ, Dept Phys & Astron, Nashville, TN USA. Univ Rome, Dipartimento Fis, Rome, Italy. Vanderbilt Univ, Dept Physiol & Mol Biophys, Nashville, TN 37232 USA. Univ Roma Tre, Dipartimento Fis, I-00146 Rome, Italy. CR Frascati, UTS Tecnol Fis Avanzate, ENEA, I-00044 Frascati, Italy. VNIIFTRI, MISDC, Moscow 141570, Russia. Cricenti, A, Ist Stutturia Mat, Via Fosso Cavaliere 100, I-00133 Rome, Italy. firstname.lastname@example.org
ISI Document Delivery No.: 848XG
Record created on 2006-10-03, modified on 2016-08-08