Three different existing steady-state models with quantum correction for simulating the resonant tunnelling diode are summarized. Numerical methods and a theoretical argument for one of the models are briefly described. Results of simulation axe focused on the capability of reproducing the negative differential resistivity.
Titre
Simulation of some quantum models for semiconductors
Publié dans
Mathematical Models & Methods in Applied Sciences
Volume
12
Numéro
8
Pages
1049-1074
Date
2002
ISSN
0218-2025
Note
Ecole Polytech Fed Lausanne, Dept Math, CH-1015 Lausanne, Switzerland. Caussignac, P, Ecole Polytech Fed Lausanne, Dept Math, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 592XH
Cited Reference Count: 31
Date de création de la notice
2006-08-24