Development of relaxor ferroelectric materials for screen-printing on alumina and silicon substrates
The paper describes processing and dielectric properties of 0.65Pb(Mn1/3Nb2/3)O-3-0.35PbTiO(3) films deposited on alumina and silicon substrates by screen-printing. Ink development and problems associated with adhesion of electrodes to substrate are discussed in detail. The relative dielectric permittivity, as large as 13,000 have been obtained on SiO2 substrate after processing optimization. (c) 2005 Elsevier Ltd. All rights reserved.
Gentil, S Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Mat Inst, Ceram Lab, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Mat Inst, Ceram Lab, CH-1015 Lausanne, Switzerland
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Record created on 2006-08-21, modified on 2016-08-08