Infoscience

Journal article

Three-dimensional ferroelectric domain imaging of bulk Pb(Zr,Ti)O-3 by atomic force microscopy

We report on the ferroelectric domain evolution as a function of the depth of the surface of 100 mum thick bulk Pb(Zr,Ti)O-3 (PZT) doped with 2% Nb. Ferroelectric domain imaging (FDI) was performed by piezoelectric detection assisted by atomic force microscopy (AFM). The depth evolution, of the polarization orientation was obtained by repeated surface chemical etching followed by FDI. It was observed that backswitching mainly occurred close to 90degrees domain and grain boundaries. The depth of these domains was estimated to be about 500 nm. This indicates that nonpenetrating domains of opposite polarity can retain their polarization vector near the surface region without the help of a top electrode interface. It also supports the idea that they act as preferential nucleation sites for polarization reversal. We suggest that AFM FDI combined with, proper etching methods could be used to construct a three-dimensional image of the whole domain structure by stacking. two-dimensional images layer by layer. (C) 2004 American Institute of Physics.

    Keywords: thin-film capacitors ; nucleation ; kinetics

    Note:

    Hong, S Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland Samsung Adv Inst Technol, Storage Lab, Suwon, South Korea

    808TN

    Times Cited:3

    Cited References Count:15

    Reference

    Record created on 2006-08-21, modified on 2016-08-08

Fulltext

  • There is no available fulltext. Please contact the lab or the authors.

Related material