000089072 001__ 89072
000089072 005__ 20180318102534.0
000089072 0247_ $$2doi$$a10.1016/S0924-4247(03)00090-6
000089072 022__ $$a0924-4247
000089072 02470 $$2DAR$$a3838
000089072 02470 $$2ISI$$a000183610300005
000089072 037__ $$aARTICLE
000089072 245__ $$a{100}-textured, piezoelectric Pb(Zr-x Ti1-x)O-3 thin films for MEMS: integration, deposition and properties
000089072 269__ $$a2003
000089072 260__ $$c2003
000089072 336__ $$aJournal Articles
000089072 500__ $$aMuralt, P Ecole Polytech Fed Lausanne, Mat Inst, Fac Engn, Ceram Lab, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Mat Inst, Fac Engn, Ceram Lab, CH-1015 Lausanne, Switzerland 691MP Times Cited:29 Cited References Count:40
000089072 520__ $$aPb(Zr-x, Ti1-x)O-3 (PZT) piezoelectric thin films are of major interest in MEMS technology for their ability to provide electro-mechanical coupling. In this work, the effective transverse piezoelectric coefficient e(31,f) of sol-gel processed films was investigated as a function of composition, film texture and film thickness. Dense, textured and crack-free PZT films have been obtained on silicon substrates up to a thickness of 4 mum. Crystallization anneals have been performed for every 0.25 mum. Nucleation on the previous perovskite layer combined with directional growth leads to a gradient of the compositional parameter x of +/-20% (at x = 0.53 average composition). Best properties have been achieved with {100}-textured film of x = 0.53 composition. Large remanent e(31,f) values of -11 to -12 C/m(2) have been obtained in the whole thickness range of 1-4 mum. These values are superior to values of undoped bulk ceramics, but smaller than in current, optimized (doped) bulk PZT. (C) 2003 Elsevier Science B.V. All rights reserved.
000089072 6531_ $$apiezoelectric thin films
000089072 6531_ $$apzt
000089072 6531_ $$amems
000089072 6531_ $$alead-zirconate-titanate
000089072 6531_ $$asolid-solution system
000089072 6531_ $$acrystal orientation dependence
000089072 6531_ $$agel pzt-films
000089072 6531_ $$athermodynamic theory
000089072 6531_ $$afabrication
000089072 6531_ $$amicromotors
000089072 6531_ $$aelectrodes
000089072 6531_ $$aactuators
000089072 6531_ $$asensors
000089072 700__ $$0241284$$aLedermann, N.$$g102323
000089072 700__ $$0240369$$aMuralt, P.$$g105945
000089072 700__ $$0241509$$aBaborowski, J.$$g117055
000089072 700__ $$0241508$$aGentil, S.$$g121841
000089072 700__ $$aMukati, K.
000089072 700__ $$0240852$$aCantoni, M.$$g120862
000089072 700__ $$0241704$$aSeifert, A.$$g107510
000089072 700__ $$0240019$$aSetter, N.$$g106416
000089072 773__ $$j105$$k2$$q162-170$$tSensors and Actuators A: Physical
000089072 909CO $$ooai:infoscience.tind.io:89072$$pSB$$pSTI$$particle
000089072 909C0 $$0252012$$pLC$$xU10334
000089072 909C0 $$0252025$$pCIME$$xU10192
000089072 937__ $$aLC-ARTICLE-2003-013
000089072 970__ $$a188/LC
000089072 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000089072 980__ $$aARTICLE