PbZrxTi1-xO3 (x=0.45) and PbxCa1-xTiO3 (PCT) (x=0.75) porous thin films were deposited on platinized silicon wafers by chemical solution deposition route using a polymer as a volatile phase. The introduction of pores creates a matrix-void composite resulting in a high figure of merit for pyroelectric applications. The figures of merit F-v and F-d for PCT films are shown to be as high as 4.8 and 250 muC/m(2) K, respectively. (C) 2002 American Institute of Physics.