Preparation and dielectric properties of Pb(Sc1/2Nb1/2)O-3-PbTiO3 thin films near MPB compositions

The (1-x)Pb(Sc1/2Nb1/2)O-3-xPbTiO(3)(x=0.4, PSNT(60/40)) thin films near the morphotropic phase boundary(MPB) composition were successfully deposited via sol-gel method. Taking the strict controls of processing factors such as the stable and homogeneous precursor solutions, conditions of heat treatment and suitable substrates, it was possible to obtain the pyrochlore-free PSNT(60/40) thin films. The effect of substrate on the microstructure and crystallographic orientation is shown. Dielectric behaviors of sol-gel derived PSNT(60/40) thin films have been investigated.


Published in:
Ferroelectrics, 271, 1, 1665-1670
Year:
2002
ISSN:
0015-0193
Keywords:
Note:
Kuh, BJ Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 373-1 Gusong Dong, Taejon 305701, South Korea Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea Swiss Fed Inst Technol, EPFL, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland
580CJ
Times Cited:0
Cited References Count:10
Other identifiers:
Laboratories:




 Record created 2006-08-21, last modified 2018-03-17


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