Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy
The Bit formation using atomic force microscopy (AFM) was studied on 270-nm-thick < 111 > preferentially oriented Pb(Zr0.4Ti0.6)O-3 (PZT) films prepared by the sol-gel process. To minimize the cantilever-sample capacitive farce interaction, the experiment was carried out at or near the sample edge. Bit formation was investigated by calculating the electric field in AFM-tip/PZT film/bottom electrode configuration. It was found both experimentally and theoretically that:the bit size is linearly dependent on the pulse voltage-and the logarithmic value of the pulse width, The linear dependence of the bit size on the logarithmic value of pulse width was explained from the relationship between the switching time and electric field. It was found that the minimum bit size of a fully penetrating domain equals the film thickness. (C) 2001 American Vacuum Society.
Woo, J Korea Adv Inst Sci & Technol, Elect & Opt Mat Lab, Taejon 305701, South Korea Korea Adv Inst Sci & Technol, Elect & Opt Mat Lab, Taejon 305701, South Korea Samsung Adv Inst Technol, Nano Syst Lab, Suwon, South Korea Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland Samsung Adv Inst Technol, MEMS Lab, Suwon, South Korea Korea Adv Inst Sci & Technol, Elect & Opt Mat Lab, Taejon 305701, South Korea
Cited References Count:7
Record created on 2006-08-21, modified on 2016-08-08