Processing optimization of solution derived PbZr1-xTixO3 thin films for piezoelectric applications

Processing optimization allowed the sol-gel fabrication of 1 mum thick, phase pure perovskite thin films with identical grain size and controlled texture. This made it possible to fabricate stress compensated beams to measure the transverse piezoelectric coefficient over the whole composition range of PbZr1-xTixO3. The highest value of -12.1 C/m(2) was measured for (100)/(001) textured PZT53/47. For (111) textured films the maximum value of -8.7 C/m(2) was found to be in the tetragonal phase field at 55% Ti.


Published in:
Integrated Ferroelectrics, 35, 1-4, 1889-1896
Year:
2001
ISSN:
1058-4587
Keywords:
Note:
Seifert, A Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland
411XJ
Times Cited:3
Cited References Count:25
Other identifiers:
Laboratories:




 Record created 2006-08-21, last modified 2018-03-17


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