Processing optimization of solution derived PbZr1-xTixO3 thin films for piezoelectric applications
Processing optimization allowed the sol-gel fabrication of 1 mum thick, phase pure perovskite thin films with identical grain size and controlled texture. This made it possible to fabricate stress compensated beams to measure the transverse piezoelectric coefficient over the whole composition range of PbZr1-xTixO3. The highest value of -12.1 C/m(2) was measured for (100)/(001) textured PZT53/47. For (111) textured films the maximum value of -8.7 C/m(2) was found to be in the tetragonal phase field at 55% Ti.
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Seifert, A Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland
Cited References Count:25
Record created on 2006-08-21, modified on 2016-08-08