Piezoelectric cantilever microphone for photoacoustic GAS detector

New micromachined pressure sensors based on PZT coated silicon cantilevers have been fabricated and integrated in a photoacoustic gas detector. PZT Sol-gel thin films texture and composition were optimized with respect to the transverse piezoelectric coefficient e(31,f). A best value of -12 C/m(2) was obtained with (100)/(001) textured thin films at the MPB composition. Optimum stress compensation between the different layers composing the cantilever has been studied in order to yield flat cantilevers. A high response of 150 mV/Pa with a S/N of 700 at 1 Pa and 1 Hz bandwidth has been measured. The influence of the damping chamber under the cantilever is also reported.


Publié dans:
Integrated Ferroelectrics, 35, 1-4, 1907-1914
Année
2001
ISSN:
1058-4587
Mots-clefs:
Note:
Ledermann, N Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland Siemens Bldg Technol AG Cerberus Div, CH-8708 Mannedorf, Switzerland
411XJ
Times Cited:0
Cited References Count:7
Autres identifiants:
Laboratoires:




 Notice créée le 2006-08-21, modifiée le 2019-12-05


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