Dielectric and electromechanical properties of ferroelectric-relaxor 0.9 Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) thin films

Pyrochlore free 0.9Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) thin films were prepared from alkoxide-based solution precursors. Preferential (111) crystallographic orientation was obtained on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating. Dielectric, electrostrictive, and piezoelectric properties of the films were characterized in detail. Films show relaxor-like behavior, but with dielectric permittivity which is low (around 4300 at peak and at 340 Hz with E-ac=1.6x10(6) V/m) compared to bulk ceramics and single crystals. Several parameters which might be responsible for this lower permittivity are suggested. The ac and dc field dependences of the dielectric response have been investigated. Electrostrictive coefficients, M-11(7.76x10(-18) m(2)/V-2) and Q(11)(1.9x10(-2) m(4) C-2), were determined by measuring strain and polarization as a function of the electric field (E-ac). The maximum field induced piezoelectric d(33) coefficient is 100 pm/V and electrostrictive strains up to 1.2x10(-3) (with an ac electric field of 140 kV/cm) were measured. (C) 2001 American Institute of Physics.


Published in:
Journal of Applied Physics, 90, 9, 4682-4689
Year:
2001
ISSN:
0021-8979
Keywords:
Note:
Kighelman, Z Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland
482UE
Times Cited:9
Cited References Count:54
Other identifiers:
Laboratories:




 Record created 2006-08-21, last modified 2018-03-17


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