Dielectric and electromechanical properties of ferroelectric-relaxor 0.9 Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) thin films
Pyrochlore free 0.9Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) thin films were prepared from alkoxide-based solution precursors. Preferential (111) crystallographic orientation was obtained on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating. Dielectric, electrostrictive, and piezoelectric properties of the films were characterized in detail. Films show relaxor-like behavior, but with dielectric permittivity which is low (around 4300 at peak and at 340 Hz with E-ac=1.6x10(6) V/m) compared to bulk ceramics and single crystals. Several parameters which might be responsible for this lower permittivity are suggested. The ac and dc field dependences of the dielectric response have been investigated. Electrostrictive coefficients, M-11(7.76x10(-18) m(2)/V-2) and Q(11)(1.9x10(-2) m(4) C-2), were determined by measuring strain and polarization as a function of the electric field (E-ac). The maximum field induced piezoelectric d(33) coefficient is 100 pm/V and electrostrictive strains up to 1.2x10(-3) (with an ac electric field of 140 kV/cm) were measured. (C) 2001 American Institute of Physics.
Kighelman, Z Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland
Cited References Count:54
Record created on 2006-08-21, modified on 2016-08-08