000088990 001__ 88990
000088990 005__ 20181203020522.0
000088990 0247_ $$2doi$$a10.1063/1.126610
000088990 022__ $$a0003-6951
000088990 02470 $$2DAR$$a2806
000088990 02470 $$2ISI$$a000087239400045
000088990 037__ $$aARTICLE
000088990 245__ $$aEvaluation of niobium effects on the longitudinal piezoelectric coefficients of Pb(Zr, Ti)O-3 thin films
000088990 260__ $$c2000
000088990 269__ $$a2000
000088990 336__ $$aJournal Articles
000088990 500__ $$aHaccart, T Univ Valenciennes & Hainaut Cambresis, LAMAC, CRITT ZI Champ Abbesse, F-59600 Maubeuge, France Univ Valenciennes & Hainaut Cambresis, LAMAC, CRITT ZI Champ Abbesse, F-59600 Maubeuge, France Ecole Polytech Fed Lausanne, Lab Ceram, CH-1015 Lausanne, Switzerland
000088990 500__ $$a317QX
000088990 500__ $$aTimes Cited:7
000088990 500__ $$aCited References Count:18
000088990 520__ $$aPb(Zr, Ti)O-3 (PZT) and Pb(Zr, Ti, Nb)O-3 (PNZT) thin films have been deposited on platinized silicon substrates by sputtering followed by a postannealing treatment. The Nb concentration in the films varied between 1 and 7 at. % with increments of 1 at. %. The effects of Nb modification on the piezoelectric response, and particularly on the longitudinal piezoelectric coefficient d(33), have been investigated. The introduction of Nb enhances the dielectric and piezoelectric properties of the PZT films. The best doping level ranges from 1 up to 2 at. %. The relative dielectric constant epsilon(r), reaches 1100, and the maximum value of d(33) is equal to 115 pm/V for a 1 at. % Nb-doped PZT in comparison to 820 and 55 pm/V for an undoped PZT film. PNZT films are suitable for microsystem applications. (C) 2000 American Institute of Physics. [S0003-6951(00)03422-7].
000088990 6531_ $$atarget
000088990 700__ $$aHaccart, T.
000088990 700__ $$aCattan, E.
000088990 700__ $$aRemiens, D.
000088990 700__ $$aHiboux, S.
000088990 700__ $$0240369$$aMuralt, P.$$g105945
000088990 773__ $$j76$$k22$$q3292-3294$$tApplied Physics Letters
000088990 909C0 $$0252012$$pLC$$xU10334
000088990 909CO $$ooai:infoscience.tind.io:88990$$pSTI$$particle
000088990 937__ $$aLC-ARTICLE-2000-008
000088990 970__ $$a260/LC
000088990 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000088990 980__ $$aARTICLE