Preparation of La1-xSrxCoO3 electrodes for ferroelectric thin films by RF magnetron sputtering

(100)-oriented stoichiometric LSCO films were deposited on Pt/TiO2/SiO2/Si, TiO2/Pt/TiO2/SiO2/Si and Si substrates with rf magnetron sputtering using a single self fabricated oxide target. Best conductive LSCO film was obtained at 600 degrees C, yielding a specific resistivity of 90 mu Ohm cm. The PZT film deposited on the LSCO(100) electrode oriented to (100) or (001). Maximum value of d(33) coefficientwas 73.5 pm/V.


Published in:
Ferroelectrics, 225, 1-4, 1141-1147
Year:
1999
ISSN:
0015-0193
Keywords:
Note:
Masumoto, H Ecole Polytech Fed Lausanne, Lab Ceram, Dept Mat, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Lab Ceram, Dept Mat, CH-1015 Lausanne, Switzerland
227KG
Times Cited:1
Cited References Count:13
Laboratories:




 Record created 2006-08-21, last modified 2018-03-17


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