(100)-oriented stoichiometric LSCO films were deposited on Pt/TiO2/SiO2/Si, TiO2/Pt/TiO2/SiO2/Si and Si substrates with rf magnetron sputtering using a single self fabricated oxide target. Best conductive LSCO film was obtained at 600 degrees C, yielding a specific resistivity of 90 mu Ohm cm. The PZT film deposited on the LSCO(100) electrode oriented to (100) or (001). Maximum value of d(33) coefficientwas 73.5 pm/V.