The effect of bottom electrode on the performance of thin film based capacitors in the gigahertz region

Capacitors in metal-insulator-metal structure have been fabricated with different bottom electrodes. It has been found that the observed losses are enormous at gigahertz frequencies unless due care is taken not only for the conductivity of the bottom electrode but also its thickness. Very thin bottom electrodes (thickness similar to 100 nm) modify the dielectric response substantially and major loss contributions arise from the substrate, the electrode resistance, and the contacts. A simple approach is suggested to model and experimentally evaluate the electrode resistance. (C) 1999 American Institute of Physics. [S0003-6951(99)00723-8].


Published in:
Applied Physics Letters, 74, 23, 3546-3548
Year:
1999
ISSN:
0003-6951
Keywords:
Note:
Dube, DC Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland Indian Inst Technol, Dept Phys, New Delhi 110016, India
200BL
Times Cited:19
Cited References Count:13
Laboratories:




 Record created 2006-08-21, last modified 2018-03-17


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