Infoscience

Journal article

La1-xSrxCoO3 as electrode materials for ferroelectric thin film applications

PZT thin films for memory applications are known to lack sufficient resistance versus polarization fatigue when used together with platinum. One possible solution for this problem is to use conductive oxides like La1-xSrxCoO3 (LSCO) as an electrode. In this paper LSCO thin films were deposited via RF magnetron sputter deposition (face to face configuration) from a single oxide target. Changing the layer beneath LSCO at 750 degrees C and an RF Power of 50 W on SiO2/Si, the film is slightly (100) textured. A. strong (111) texture is established in case of a TiO2/Pt/TiO2/SiO2/Si. In contrary, a strong c-axis orientation could be observed on Pt/TiO2/SiO2/Si.

    Keywords: o heterostructures ; capacitors ; fatigue ; silicon

    Note:

    Moessner, C IPT Ionen & Plasma Techn GMBH Kaiserslautern, D-67661 Kaiserslautern, Germany IPT Ionen & Plasma Techn GMBH Kaiserslautern, D-67661 Kaiserslautern, Germany Ecole Polytech Fed Lausanne, Lab Ceram, CH-1015 Lausanne, Switzerland

    Part 4 Suppl. S

    Yz023

    Times Cited:0

    Cited References Count:11

    Reference

    • LC-ARTICLE-1998-024

    Record created on 2006-08-21, modified on 2016-08-08

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