Relaxor behavior and electromechanical properties of Pb(Mg1/3Nb2/3)O-3 thin films

Pb(Mg1/3Nb2/3)O-3 (PMN) alkoxide precursor solutions were synthesized and used to prepare thin films by spin coating on TiO2/Pt/TiO2/SiO2/Si substrates. Many parameters like the use of homogeneous and stable precursor solutions and appropriate processing were used to greatly reduce the presence of the nonferroelectric pyrochlore phase. Transmission electron microscopy investigations, dielectric, electrostrictive, and direct current field induced piezoelectric measurements were carried out and have shown that PMN thin films exhibit a relaxor-like behavior. (C) 1998 American Institute of Physics. [S0003-6951(98)03142-8].


Published in:
Applied Physics Letters, 73, 16, 2281-2283
Year:
1998
ISSN:
0003-6951
Keywords:
Note:
Kighelman, Z Swiss Fed Inst Technol, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland
128UY
Times Cited:44
Cited References Count:16
Laboratories:




 Record created 2006-08-21, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)