Evidence of domain wall contribution to the dielectric permittivity in PZT thin films at sub-switching fields

Through the use of relations analogous to that of the Rayleigh law, it is demonstrated that the ac electric field dependence of the permittivity of ferroelectric thin films can be described. It is further shown that both reversible and irreversible components of the permittivity decrease linearly with the logarithm of the frequency of the ac field. The results demonstrate that the models describing the interaction of domain walls and randomly distributed pinning centers in magnetic materials can be extended to the displacement of domain walls in ferroelectric thin films. (C) 1997 American Institute of Physics.


Published in:
Journal of Applied Physics, 82, 4, 1973-1975
Year:
1997
ISSN:
0021-8979
Keywords:
Note:
Taylor, Dv Ecole Polytech Fed Lausanne,Dept Mat Sci,Lab Ceram,Ch-1015 Lausanne,Switzerland
Xq797
Times Cited:55
Cited References Count:15
Laboratories:




 Record created 2006-08-21, last modified 2018-03-17


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