Pb(Zr,Ti)O3 thin films on zirconium membranes for micromechanical applications
Maeder, Thomas; Muralt, Paul; Sagalowicz, Laurent; Reaney, Ian; Kohli, Markus; Kholkin, Andrei; Setter, Nava
1996

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Abstract

An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices, Very reactive zir conium films have been taken in order to test the quality of the specially designed RuO2/Cr buffer under the condition of in situ sputter deposition of PZT at 600 degrees C. The PZT/RuO2 interface was found to be free of intermediate phases. A PZT activated metallic micromechanical element was demonstrated with a thin film Zr membrane. (C) 1996 American Institute of Physics.

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Title Pb(Zr,Ti)O3 thin films on zirconium membranes for micromechanical applications
Author(s) Maeder, Thomas ; Muralt, Paul ; Sagalowicz, Laurent ; Reaney, Ian ; Kohli, Markus ; Kholkin, Andrei ; Setter, Nava
Published in Applied Physics Letters
Volume 68
Issue 6
Pages 776-778
Date 1996
Publisher American Institute of Physics
ISSN 0003-6951
Note Maeder, T Ecole Polytech Fed Lausanne,Dept Mat,Lab Ceram,Ch-1015 Lausanne,Switzerland Univ Sheffield,Dept Mat Engn,Sheffield S10 2tn,S Yorkshire,England, Tt663, Times Cited:24, Cited References Count:14
DOI https://doi.org/10.1063/1.116529
Other identifier(s) View record in Web of Science
Laboratories LC
Record Appears in Scientific production and competences > STI - School of Engineering > STI Archives > LC - Ceramics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2006-08-21

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