Pb(Zr,Ti)O3 thin films on zirconium membranes for micromechanical applications
An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices, Very reactive zir conium films have been taken in order to test the quality of the specially designed RuO2/Cr buffer under the condition of in situ sputter deposition of PZT at 600 degrees C. The PZT/RuO2 interface was found to be free of intermediate phases. A PZT activated metallic micromechanical element was demonstrated with a thin film Zr membrane. (C) 1996 American Institute of Physics.
Maeder, T Ecole Polytech Fed Lausanne,Dept Mat,Lab Ceram,Ch-1015 Lausanne,Switzerland Univ Sheffield,Dept Mat Engn,Sheffield S10 2tn,S Yorkshire,England, Tt663, Times Cited:24, Cited References Count:14
Record created on 2006-08-21, modified on 2016-08-08