Infoscience

Journal article

Depletion and Depolarizing Effects in Ferroelectric Thin-Films and Their Manifestations in Switching and Fatigue

The manifestations of semiconductor depletion and depolarizing effects in switching and fatigue are studied and compared. It is shown that these effects play important but quite different roles in switching. The depletion effect strongly influences the values of the coercive field, E(c), and is responsible for its film-thickness dependence. The depolarizing effect influences significantly other parameters of the hysteresis loops. It is shown that the inverse thickness dependence of E(c) can not be attributed to the presence of a non-switching layer. Contribution of the effects in question to fatigue of the loop parameters is discussed.

    Keywords: memories

    Note:

    Tagantsev, Ak Ecole Polytech Fed Lausanne,Dept Mat,Ceram Lab,Ch-1015 Lausanne,Switzerland Polish Acad Sci,Inst Molec Phys,Poznan,Poland

    Qw499

    Times Cited:27

    Cited References Count:21

    Reference

    Record created on 2006-08-21, modified on 2016-08-08

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