Journal article

Processing and properties of thin film pyroelectric devices

Pyroelectric PbTiO3 thin films devices with two temperature compensating elements on a SiO2/Si3N4 membranes have been fabricated and characterized. The measured voltage responsivity as a function of radiation modulation frequency has been compared to finite element model calculation. The relevant film properties have been compared for sputter and a sol-gel deposition techniques. The calculated responsivity amounts to 30 V/W. The measured pyroelectric signal is a few mu V.

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