Processing and properties of thin film pyroelectric devices

Pyroelectric PbTiO3 thin films devices with two temperature compensating elements on a SiO2/Si3N4 membranes have been fabricated and characterized. The measured voltage responsivity as a function of radiation modulation frequency has been compared to finite element model calculation. The relevant film properties have been compared for sputter and a sol-gel deposition techniques. The calculated responsivity amounts to 30 V/W. The measured pyroelectric signal is a few mu V.


Published in:
Microelectronic Engineering, 29, 1-4, 93-96
Year:
1995
Publisher:
Elsevier
ISSN:
0167-9317
Note:
Kohli, M Ecole Polytech Fed Lausanne,Lab Ceram,Ch-1015 Lausanne,Switzerland, Tp608, Times Cited:21, Cited References Count:7
Laboratories:




 Record created 2006-08-21, last modified 2018-03-17

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