Effect of composition and microstructure on the transport and piezoresistive properties of thick-film resistors

The piezoresistive effect of thick-film resistors has found widespread application in pressure and force sensors due to their high strain-sensitivity, stability and low-cost. The main material requirements for these applications are a high piezoresistive response, low noise and low temperature dependence. However, many useful elastic substrate materials are degraded at the standard thick-film processing temperature of 850 °C, and therefore require a lower one. This is achieved by engineering the glass composition. Here we discuss how the composition and microstructure affect the electronic properties of thick-film resistors with both high and low processing temperatures. Depending on the firing temperature, we find percolative or non-percolative behaviors in the range of Ru02 concentrations studied. We show that for percolative samples a lowering of the Ru02 concentration generally leads to a logarithmic increase of the piezoresistive response, which poses serious limitations regarding the associated power- law increase of noise.


Published in:
XXVIII International Conference of IMAPS Poland Chapter, 35-42
Presented at:
XXVIII International Conference of IMAPS Poland Chapter
Year:
2004
Keywords:
Note:
Article de revue sur les travaux effectués au LPM dans le domaine des résistances à basse température. La présentation discute plus extensivement les tenants et aboutissants, ainsi que le système complet de couches épaisses.
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2006-06-22, last modified 2018-01-27

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