Dimensionally Stable Anode-Type Anode Based on Conductive p-Silicon Substrate

In the search for a good dimensionally stable anode-type electrode, p-silicon (1-3 mW cm) has been chosen as the substrate material due to its high anodic stability and its reasonable cost compared to titanium and tantalum. Several p-Si/IrO2 electrodes have been prepd. by thermal decompn. at different temp. The effect of prepn. temp. on the morphol. and electrochem. properties has been investigated by SEM anal., X-ray diffraction, and cyclic voltammetry in 1 M HClO4 showing that p-Si/IrO2 prepd. at 450 DegC presents a high surface area and a low degree of crystallinity, while increasing the calcination temp. resulted in a decrease of true area and an increase in crystallite size. The activity of p-Si/IrO2 electrodes for simple electron transfer reactions and for complex electrode reactions has been also studied by cyclic voltammetry and linear polarization in solns. contg. the hydroquinone/benzoquinone redox couple and various org. compds. (isopropanol, tert-butanol, methanol). Finally, the anodic stability of a p-Si/IrO2 electrodes prepd. at 450 DegC has been tested by an accelerated service life test. p-Silicon based electrodes were shown to have the highest standardized service life compared with that of titanium- or tantalum-based electrodes. [on SciFinder (R)]

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Journal of the Electrochemical Society, 150, 2, D41-D45
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 Record created 2006-02-22, last modified 2018-03-17

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