Abstract

B-doped diamond films were deposited by large-area hot filament chem. vapor deposition (HFCVD) on Si and different industrial electrode materials, such as Ti, Zr, Nb, Ta, W, and graphite, with areas up to 50 * 60 cm2. B-doping levels ranging from 50 to several thousand ppm were realized using trimethylborate. These electrodes are characterized in terms of their material and electrochem. properties by SEM, Raman spectroscopy, secondary ion mass spectrometry (SIMS), and cyclic voltammetry. Oxidn. of org. compds. in water was studied using different alcs. and org. acids. In the presence of O2, org. mols. were oxidized even at very low concns. to CO2 in the absence of large amts. of other detectable byproducts. [on SciFinder (R)]

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